2D212A
Diodes 2D212A silicon, diffusion.
Designed to convert alternating voltage with a frequency of up to 100 kHz.
Available in a metal-plastic housing with flexible leads.
The type of diode and the connection diagram of the electrodes with the leads are shown on the housing.
The negative electrode is connected to the metal base of the housing.
The weight of the diode is no more than 1.5 g.
Case type: KD-16.
Technical specifications: AEYAR.432120.177 TU.

Main technical characteristics of the 2D212A diode:
• Uobp max – Maximum constant reverse voltage: 200 V;
• Inp max – Maximum forward current: 1 A;
• fd – Operating frequency of the diode: 100 kHz;
• Unp – Constant forward voltage: no more than 1 V at Inp 1 A;
• Iobp – Constant reverse current: no more than 50 µA at Uobp 200 V;
• trev – Reverse recovery time: 0.3 µs;
• SD – Total capacitance: 45 pF at Uobp 100 V

Alternatives: 2D212ADC, 2D212A, 2D212, 2Д212