Type Designator: 2N711

Material of Transistor: Ge

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 12 V

Maximum Collector-Emitter Voltage |Vce|: 7 V

Maximum Emitter-Base Voltage |Veb|: 1 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 100 °C

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 9 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: –

Package: TO18