Type Designator: BCX34

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.73 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 80 MHz

Collector Capacitance (Cc): 12 pF

Forward Current Transfer Ratio (hFE), MIN: 90

Noise Figure, dB: –

Package: X09