X-, Ku-band Internally Matched Power Gallium Arsenide Field Effect Transistor

FEATURES
･BROAD BAND INTERNALLY MATCHED FET
･HIGH POWER
P1dB= 39.5dBm at 10.7GHz to 11.7GHz
･HIGH GAIN
G1dB= 9.0dB at 10.7GHz to 11.7GHz
･LOW INTERMODULATION DISTORTION
IM3(MIN.) = -42dBc at Pout= 27.0dBm (Single Carrier Level)
･HERMETICALLY SEALED PACKAGE