Type Designator: 2N1131

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.6 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 35 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 50 MHz

Collector Capacitance (Cc): 45 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: –

Package: TO5