Type Designator: 2N3055

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 117 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 70 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 200 °C

Transition Frequency (ft): 0.2 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: –

Package: TO3