Type Designator: BF470

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 2 W

Maximum Collector-Base Voltage |Vcb|: 250 V

Maximum Collector-Emitter Voltage |Vce|: 250 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 125 °C

Transition Frequency (ft): 60 MHz

Collector Capacitance (Cc): 1.8 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: –

Package: TO126