Type Designator: BLW96

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 340 W

Maximum Collector-Base Voltage |Vcb|: 110 V

Maximum Collector-Emitter Voltage |Vce|: 55 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 12 A

Max. Operating Junction Temperature (Tj): 200 °C

Transition Frequency (ft): 1200 MHz

Collector Capacitance (Cc): 500 pF

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: –

Package: M174