TO-78-6
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Bipolar (BJT) Transistor Array 2 NPN (Dual) 60V 30mA 350mW Through Hole TO-78-6
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TYPE | DESCRIPTION |
Category | Discrete Semiconductor Products |
Transistors | |
Bipolar (BJT) | |
Bipolar Transistor Arrays | |
Mfr | Microchip Technology |
Series | Military, MIL-PRF-19500/355 |
Package | Bulk |
Product Status | Active |
Transistor Type | 2 NPN (Dual) |
Current – Collector (Ic) (Max) | 30mA |
Voltage – Collector Emitter Breakdown (Max) | 60V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 100µA, 1mA |
Current – Collector Cutoff (Max) | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 1mA, 5V |
Power – Max | 350mW |
Frequency – Transition | – |
Operating Temperature | -65°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-78-6 Metal Can |
Supplier Device Package | TO-78-6 |
Base Product Number | 2N2920 |
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