Type Designator: 2N5005

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 33 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5.5 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 200 °C

Transition Frequency (ft): 70 MHz

Collector Capacitance (Cc): 250 pF

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: –

Package: TO59